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FQH90N10V2 - Fairchild Semiconductor - Transistors - FETs, MOSFETs - Single

FQH90N10V2

Fairchild Semiconductor

N-CHANNEL POWER MOSFET

FQH90N10V2 is a Transistors - FETs, MOSFETs - Single manufactured by Fairchild Semiconductor. N-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-3.

In Stock: 370

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C105A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs10mOhm @ 52.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs191 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds6150 pF @ 25 V
FET Feature-
Power Dissipation (Max)330W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD
Package / CaseTO-247-3

Frequently Asked Questions

FQH90N10V2 is a Transistors - FETs, MOSFETs - Single manufactured by Fairchild Semiconductor. N-CHANNEL POWER MOSFET

The mounting type of FQH90N10V2 is Through Hole.

The operating temperature range of FQH90N10V2 is -55°C ~ 175°C (TJ).

The package type of FQH90N10V2 is TO-247-3.

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