POWER FIELD-EFFECT TRANSISTOR, 1
FQB11P06TM is a Transistors - FETs, MOSFETs - Single manufactured by Fairchild Semiconductor. POWER FIELD-EFFECT TRANSISTOR, 1. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.
In Stock: 1,678
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 5.7A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 53W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK (TO-263) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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3J LIMITED
