IC DRAM 4GBIT PARALLEL 96FBGA
EM6GE16EWXD-10H is a Memory manufactured by Etron Technology, Inc.. IC DRAM 4GBIT PARALLEL 96FBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 95°C (TC), voltage - supply 1.425V ~ 1.575V, package / case 96-TFBGA.
In Stock: 1,179
| Attribute | Value |
|---|---|
| Product Status | Not For New Designs |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3 |
| Memory Size | 4Gb (256M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 933 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 20 ns |
| Voltage - Supply | 1.425V ~ 1.575V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 96-TFBGA |
| Supplier Device Package | 96-FBGA (9x13) |
EM6GE16EWXD-10H is Not For New Designs. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W632GG6MB-11 TR | Winbond Electronics | IC DRAM 2GBIT PARALLEL 96VFBGA | 100% | View |
| MT41K128M8DA-107 IT:J TR | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 78FBGA | 99% | View |
| MT41K128M8DA-107:J | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 78FBGA | 99% | View |
| MT41K512M16VRN-107 AIT:P | Micron Technology Inc. | IC DRAM 8GBIT PARALLEL 96FBGA | 99% | View |
| IS43TR16256B-093NBLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 4GBIT PARALLEL 96TWBGA | 94% | View |
| 71024S20TYGI8 | Renesas Electronics America Inc | IC SRAM 1MBIT PARALLEL 32SOJ | 70% | View |
Submit your RFQ for EM6GE16EWXD-10H and get a quote within 24 hours.
3J LIMITED
