IC DRAM 256MBIT PARALLEL 60FBGA
EM6AA160BKE-4H is a Memory manufactured by Etron Technology, Inc.. IC DRAM 256MBIT PARALLEL 60FBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 2.3V ~ 2.7V, package / case 60-TFBGA.
In Stock: 1,141
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR |
| Memory Size | 256Mb (16M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 250 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 700 ps |
| Voltage - Supply | 2.3V ~ 2.7V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 60-TFBGA |
| Supplier Device Package | 60-FBGA (8x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS43R83200D-5TL | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | 91% | View |
| IS43R86400F-5TL | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | 91% | View |
| MT46V32M16BN-5B:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | 90% | View |
| MT46V32M16P-5B XIT:J TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | 90% | View |
| MT46V32M4P-6T:D TR | Micron Technology Inc. | IC DRAM 128MBIT PARALLEL 66TSOP | 83% | View |
| MT46V32M16P-6T L IT:F | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | 83% | View |
Submit your RFQ for EM6AA160BKE-4H and get a quote within 24 hours.
3J LIMITED
