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FBG30N04CC - EPC Space, LLC - Transistors - FETs, MOSFETs - Single

FBG30N04CC

EPC Space, LLC

GAN FET HEMT 300V4A COTS 4FSMD-C

FBG30N04CC is a Transistors - FETs, MOSFETs - Single manufactured by EPC Space, LLC. GAN FET HEMT 300V4A COTS 4FSMD-C. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 4-SMD, No Lead.

In Stock: 100

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)300 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs404mOhm @ 4A, 5V
Vgs(th) (Max) @ Id2.8V @ 600µA
Gate Charge (Qg) (Max) @ Vgs2.6 nC @ 5 V
Vgs (Max)+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds450 pF @ 150 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-SMD
Package / Case4-SMD, No Lead

Frequently Asked Questions

FBG30N04CC is a Transistors - FETs, MOSFETs - Single manufactured by EPC Space, LLC. GAN FET HEMT 300V4A COTS 4FSMD-C

The mounting type of FBG30N04CC is Surface Mount.

The operating temperature range of FBG30N04CC is -55°C ~ 150°C (TJ).

The package type of FBG30N04CC is 4-SMD, No Lead.

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