GAN FET HEMT100V30A COTS 4FSMD-B
FBG10N30BC is a Transistors - FETs, MOSFETs - Single manufactured by EPC Space, LLC. GAN FET HEMT100V30A COTS 4FSMD-B. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 4-SMD, No Lead.
In Stock: 45
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 5 V |
| Vgs (Max) | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-SMD |
| Package / Case | 4-SMD, No Lead |
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3J LIMITED
