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DXTN10060DFJBQ-7 - Diodes Incorporated - Transistors - Bipolar (BJT) - Single

DXTN10060DFJBQ-7

Diodes Incorporated

TRANS NPN 60V 4A 3DFN

DXTN10060DFJBQ-7 is a Transistors - Bipolar (BJT) - Single manufactured by Diodes Incorporated. TRANS NPN 60V 4A 3DFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 3-UDFN Exposed Pad, current - collector (ic) (max) 4 A.

In Stock: 2,299

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic320mV @ 200mA, 4A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce340 @ 200mA, 2V
Power - Max1.8 W
Frequency - Transition125MHz
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case3-UDFN Exposed Pad
Supplier Device PackageU-DFN2020-3 (Type B)

Frequently Asked Questions

DXTN10060DFJBQ-7 is a Transistors - Bipolar (BJT) - Single manufactured by Diodes Incorporated. TRANS NPN 60V 4A 3DFN

The mounting type of DXTN10060DFJBQ-7 is Surface Mount.

The operating temperature range of DXTN10060DFJBQ-7 is -55°C ~ 175°C (TJ).

The package type of DXTN10060DFJBQ-7 is 3-UDFN Exposed Pad.

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