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DMT67M8LPSW-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single

DMT67M8LPSW-13

Diodes Incorporated

MOSFET N-CH 60V 17.3A/82A PWRDI

DMT67M8LPSW-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 60V 17.3A/82A PWRDI. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

In Stock: 8

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C17.3A (Ta), 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs37.5 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2130 pF @ 30 V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerDI5060-8 (Type Q)
Package / Case8-PowerTDFN

Frequently Asked Questions

DMT67M8LPSW-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 60V 17.3A/82A PWRDI

The mounting type of DMT67M8LPSW-13 is Surface Mount.

The operating temperature range of DMT67M8LPSW-13 is -55°C ~ 150°C (TJ).

The package type of DMT67M8LPSW-13 is 8-PowerTDFN.

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