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DMN10H120SFG-7 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single

DMN10H120SFG-7

Diodes Incorporated

MOSFET N-CH 100V 3.8A PWRDI3333

DMN10H120SFG-7 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 100V 3.8A PWRDI3333. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN.

In Stock: 67,360

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs110mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10.6 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds549 pF @ 50 V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerDI3333-8
Package / Case8-PowerVDFN

Frequently Asked Questions

DMN10H120SFG-7 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 100V 3.8A PWRDI3333

The mounting type of DMN10H120SFG-7 is Surface Mount.

The operating temperature range of DMN10H120SFG-7 is -55°C ~ 150°C (TJ).

The package type of DMN10H120SFG-7 is 8-PowerVDFN.

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