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DMN1019UFDE-7 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single

DMN1019UFDE-7

Diodes Incorporated

MOSFET N CH 12V 11A U-DFN2020-6E

DMN1019UFDE-7 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N CH 12V 11A U-DFN2020-6E. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-PowerUDFN.

In Stock: 75

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12 V
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs10mOhm @ 9.7A, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs50.6 nC @ 8 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds2425 pF @ 10 V
FET Feature-
Power Dissipation (Max)690mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageU-DFN2020-6 (Type E)
Package / Case6-PowerUDFN

Frequently Asked Questions

DMN1019UFDE-7 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N CH 12V 11A U-DFN2020-6E

The mounting type of DMN1019UFDE-7 is Surface Mount.

The operating temperature range of DMN1019UFDE-7 is -55°C ~ 150°C (TJ).

The package type of DMN1019UFDE-7 is 6-PowerUDFN.

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