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DDA114EH-7 - Diodes Incorporated - Transistors - Bipolar (BJT) - Arrays, Pre-Biased

DDA114EH-7

Diodes Incorporated

TRANS 2PNP PREBIAS 0.15W SOT563

DDA114EH-7 is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by Diodes Incorporated. TRANS 2PNP PREBIAS 0.15W SOT563. Key specifications: mounting type Surface Mount, package / case SOT-563, SOT-666, current - collector (ic) (max) 100mA, power - max 150mW.

In Stock: 2,950

Product Attributes

AttributeValue
Product StatusActive
Transistor Type2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)-
Frequency - Transition250MHz
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563

Frequently Asked Questions

DDA114EH-7 is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by Diodes Incorporated. TRANS 2PNP PREBIAS 0.15W SOT563

The mounting type of DDA114EH-7 is Surface Mount.

The package type of DDA114EH-7 is SOT-563, SOT-666.

The current rating of DDA114EH-7 is 100mA.

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