1 GBIT, 3.0V (2.7V TO 3.6V), -40
BY25FQM1GESEIG(R) is a Memory manufactured by BYTe Semiconductor. 1 GBIT, 3.0V (2.7V TO 3.6V), -40. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.7V ~ 3.6V, package / case 8-VDFN Exposed Pad.
In Stock: 9,435
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 1Gbit |
| Memory Organization | 128M x 8 |
| Memory Interface | SPI - Quad I/O, QPI, DTR |
| Clock Frequency | 133 MHz |
| Write Cycle Time - Word, Page | 150µs, 2.4ms |
| Access Time | 7 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-VDFN Exposed Pad |
| Supplier Device Package | 8-DFN (6x8) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| BY25FQM1GESFIG(T) | BYTe Semiconductor | 1 GBIT, 3.0V (2.7V TO 3.6V), -40 | 100% | View |
| EM004LXQBB313ES2R | Everspin Technologies Inc. | IC RAM 4MBIT XSPI 24TBGA | 93% | View |
| EM004LXQBDH13ES2R | Everspin Technologies Inc. | IC RAM 4MBIT XSPI 8DFN | 93% | View |
| W25N02KVZEIU TR | Winbond Electronics | IC FLASH 2GBIT SPI 8WSON | 72% | View |
| W25N512GWYIR TR | Winbond Electronics | 512MB SERIAL NAND FLASH, 1.8V | 67% | View |
| W25N512GWYIT TR | Winbond Electronics | 512MB SERIAL NAND FLASH, 1.8V | 67% | View |
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3J LIMITED
