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BY25FQ128ELSJG(R) - BYTe Semiconductor - Memory

BY25FQ128ELSJG(R)

BYTe Semiconductor

128 MBIT, 1.8V (1.65V TO 1.95V),

BY25FQ128ELSJG(R) is a Memory manufactured by BYTe Semiconductor. 128 MBIT, 1.8V (1.65V TO 1.95V),. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 105°C (TA), voltage - supply 1.65V ~ 2V, package / case 8-SOIC (0.209", 5.30mm Width).

In Stock: 7,551

Product Attributes

AttributeValue
DigiKey Programmable-
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NOR
Memory Size128Mbit
Memory Organization16M x 8
Memory InterfaceSPI - Quad I/O, QPI
Clock Frequency133 MHz
Write Cycle Time - Word, Page120µs, 2.5ms
Access Time6 ns
Voltage - Supply1.65V ~ 2V
Operating Temperature-40°C ~ 105°C (TA)
Grade-
Qualification-
Mounting TypeSurface Mount
Package / Case8-SOIC (0.209", 5.30mm Width)
Supplier Device Package8-SOP

Frequently Asked Questions

BY25FQ128ELSJG(R) is a Memory manufactured by BYTe Semiconductor. 128 MBIT, 1.8V (1.65V TO 1.95V),

The mounting type of BY25FQ128ELSJG(R) is Surface Mount.

The operating temperature range of BY25FQ128ELSJG(R) is -40°C ~ 105°C (TA).

The supply voltage of BY25FQ128ELSJG(R) is 1.65V ~ 2V.

The memory specification of BY25FQ128ELSJG(R) is 128Mbit.

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