Analog Devices Inc./Maxim Integrated
IC NVSRAM 256KBIT PAR 28EDIP
DS1230AB-100+ is a Memory manufactured by Analog Devices Inc./Maxim Integrated. IC NVSRAM 256KBIT PAR 28EDIP. Key specifications: mounting type Through Hole, operating temperature 0°C ~ 70°C (TA), voltage - supply 4.75V ~ 5.25V, package / case 28-DIP Module (0.600", 15.24mm).
In Stock: 1,510
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 256Kb (32K x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 100ns |
| Access Time | 100 ns |
| Voltage - Supply | 4.75V ~ 5.25V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Through Hole |
| Package / Case | 28-DIP Module (0.600", 15.24mm) |
| Supplier Device Package | 28-EDIP |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| DS1220AB-100IND+ | Analog Devices Inc./Maxim Integrated | IC NVSRAM 16KBIT PARALLEL 24EDIP | 100% | View |
| DS1220AD-100IND+ | Analog Devices Inc./Maxim Integrated | IC NVSRAM 16KBIT PARALLEL 24EDIP | 99% | View |
| DS1245Y-100 | Analog Devices Inc./Maxim Integrated | IC NVSRAM 1MBIT PARALLEL 32EDIP | 99% | View |
| HN27C256AG10 | Renesas Electronics America Inc | UV EPROM, 32KX8, 100NS | 98% | View |
| HN27C4001G10 | Renesas Electronics America Inc | UV EPROM, 512KX8, 100NS | 98% | View |
| DS1230W-100+ | Analog Devices Inc./Maxim Integrated | IC NVSRAM 256KBIT PAR 28EDIP | 90% | View |
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