IC DRAM 128MBIT PARALLEL 54TFBGA
AS4C8M16S-6BIN is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 128MBIT PARALLEL 54TFBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 3V ~ 3.6V, package / case 54-TFBGA.
In Stock: 6,041
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 128Mb (8M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 2ns |
| Access Time | 5 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TFBGA |
| Supplier Device Package | 54-TFBGA (8x8) |
AS4C8M16S-6BIN is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W9812G6JB-6I TR | Winbond Electronics | IC DRAM 128MBIT PARALLEL 54TFBGA | 100% | View |
| W9816G6IH-6I | Winbond Electronics | IC DRAM 16MBIT PAR 50TSOP II | 100% | View |
| W9864G6KT-6I | Winbond Electronics | IC DRAM 64MBIT LVTTL 54TFBGA | 100% | View |
| AS4C8M16SA-6TAN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | 82% | View |
| 71V3556S100PFGI8 | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 100TQFP | 74% | View |
| 71V3556SA100BGI8 | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 119PBGA | 74% | View |
Submit your RFQ for AS4C8M16S-6BIN and get a quote within 24 hours.
3J LIMITED
