IC DRAM 128MBIT LVCMOS 54FBGA
AS4C8M16MSB-6BINTR is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 128MBIT LVCMOS 54FBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.95V, package / case 54-TFBGA.
In Stock: 7,600
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPSDR |
| Memory Size | 128Mbit |
| Memory Organization | 8M x 16 |
| Memory Interface | LVCMOS |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5.5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 54-TFBGA |
| Supplier Device Package | 54-FBGA (8x8) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS43LR32800H-6BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | 100% | View |
| IS45S32200E-7BLA1-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | 85% | View |
| IS43LD32128B-25BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 4GBIT HSUL 134TFBGA | 59% | View |
| IS46LD32640B-25BLA1 | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT HSUL 134TFBGA | 59% | View |
| IS46LD32640B-25BLA1-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT HSUL 134TFBGA | 59% | View |
| IS46LD32640B-25BLA2 | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT HSUL 134TFBGA | 59% | View |
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3J LIMITED
