IC DRAM 2GBIT PARALLEL 90FBGA
AS4C64M32MD1-5BCN is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 2GBIT PARALLEL 90FBGA. Key specifications: mounting type Surface Mount, operating temperature -25°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.9V, package / case 90-VFBGA.
In Stock: 211
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | 2Gb (64M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | -25°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 90-VFBGA |
| Supplier Device Package | 90-FBGA (8x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT46H16M32LFCX-6 IT:B | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 90VFBGA | 92% | View |
| IS66WVQ16M4FALL-200BLI-TR | ISSI, Integrated Silicon Solution Inc | 64MB, QUADRAM, 1.65V-1.95V, 200M | 90% | View |
| IS66WVO8M8FALL-200BLI | ISSI, Integrated Silicon Solution Inc | 64MB, OCTALRAM, 8MBX8, 1.8V, 200 | 90% | View |
| 71V3556S100PFGI8 | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 100TQFP | 57% | View |
| 71V3556SA100BGI8 | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 119PBGA | 57% | View |
| 71V65603S100BQGI | Renesas Electronics America Inc | IC SRAM 9MBIT PARALLEL 165CABGA | 57% | View |
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