IC DRAM 1GBIT PARALLEL 60FBGA
AS4C64M16MD1-6BIN is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 1GBIT PARALLEL 60FBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.95V, package / case 60-TFBGA.
In Stock: 1,543
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | 1Gb (64M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 60-TFBGA |
| Supplier Device Package | 60-FBGA (8x10) |
AS4C64M16MD1-6BIN is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W989D6DBGX6I TR | Winbond Electronics | IC DRAM 512MBIT PARALLEL 54VFBGA | 100% | View |
| W94AD6KBHX5I | Winbond Electronics | IC DRAM 1GBIT PARALLEL 60VFBGA | 92% | View |
| AS4C16M16SA-6TANTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | 91% | View |
| IS42S16800F-5TLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | 83% | View |
| 70V3579S5BCGI | Renesas Electronics America Inc | IC SRAM 1.125MBIT PAR 256CABGA | 81% | View |
| 70V3389S5BFI8 | Renesas Electronics America Inc | IC SRAM 1.125MBIT PAR 208CABGA | 81% | View |
Submit your RFQ for AS4C64M16MD1-6BIN and get a quote within 24 hours.
3J LIMITED
