IC DRAM 1GBIT PARALLEL 60FBGA
AS4C64M16MD1-6BCN is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 1GBIT PARALLEL 60FBGA. Key specifications: mounting type Surface Mount, operating temperature -25°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.95V, package / case 60-TFBGA.
In Stock: 4,844
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | 1Gb (64M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 60-TFBGA |
| Supplier Device Package | 60-FBGA (8x10) |
AS4C64M16MD1-6BCN is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W948D6FBHX6E | Winbond Electronics | IC DRAM 256MBIT PARALLEL 60VFBGA | 100% | View |
| MT46H64M32LFMA-6 IT:A | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 168WFBGA | 100% | View |
| IS43LR16640A-5BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 60TWBGA | 92% | View |
| MT46H32M32LFB5-5 IT:B TR | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 90VFBGA | 92% | View |
| 70V3579S5BCGI | Renesas Electronics America Inc | IC SRAM 1.125MBIT PAR 256CABGA | 81% | View |
| 71V65603S100PFGI8 | Renesas Electronics America Inc | IC SRAM 9MBIT PARALLEL 100TQFP | 66% | View |
Submit your RFQ for AS4C64M16MD1-6BCN and get a quote within 24 hours.
3J LIMITED
