DDR3, 1GB, 64M X 16, 1.5V, 96-BA
AS4C64M16D3W-12BCN is a Memory manufactured by Alliance Memory, Inc.. DDR3, 1GB, 64M X 16, 1.5V, 96-BA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 95°C (TC), voltage - supply 1.425V ~ 1.575V, package / case 96-TFBGA.
In Stock: 2,907
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3 |
| Memory Size | 1Gbit |
| Memory Organization | 64M x 16 |
| Memory Interface | SSTL_15 |
| Clock Frequency | 800 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 20 ns |
| Voltage - Supply | 1.425V ~ 1.575V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 96-TFBGA |
| Supplier Device Package | 96-FBGA (9x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS43TR82560DL-125KBL-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 78TWBGA | 99% | View |
| IS43TR16128CL-125KBL-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 96TWBGA | 99% | View |
| W632GU6NB12J | Winbond Electronics | IC DRAM 2GBIT PARALLEL 96VFBGA | 99% | View |
| MT41K1G8RKB-107:P TR | Micron Technology Inc. | IC DRAM 8GBIT PARALLEL 78FBGA | 92% | View |
| 71V016SA20BFGI8 | Renesas Electronics America Inc | IC SRAM 1MBIT PARALLEL 48FBGA | 79% | View |
| 7026L20JGI8 | Renesas Electronics America Inc | IC SRAM 256KBIT PARALLEL 84PLCC | 70% | View |
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