IC DRAM 8GBIT LVSTLE 200FBGA
AS4C512M16MD4V-053BIN is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 8GBIT LVSTLE 200FBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TC), voltage - supply 1.06V ~ 1.17V, 1.7V ~ 1.95V, package / case 200-VFBGA.
In Stock: 124
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4X |
| Memory Size | 8Gbit |
| Memory Organization | 512M x 16 |
| Memory Interface | LVSTLE_06 |
| Clock Frequency | 1.866 GHz |
| Write Cycle Time - Word, Page | 18ns |
| Access Time | 3.5 ns |
| Voltage - Supply | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TC) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 200-VFBGA |
| Supplier Device Package | 200-FBGA (10x15) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W66BP6NBUAHJ TR | Winbond Electronics | 2GB LPDDR4, X16, 2133MHZ, -40C~1 | 94% | View |
| W66CP2NQUAGJ TR | Winbond Electronics | 4GB LPDDR4, DDP, X32, 1866MHZ, - | 94% | View |
| AS4C128M16MD4-062BAN | Alliance Memory, Inc. | IC DRAM 2GBIT LVSTL 200FBGA | 94% | View |
| MT53E2G32D4DE-046 AAT:C | Micron Technology Inc. | IC DRAM 64GBIT PAR 200TFBGA | 94% | View |
| MT53E1G32D2FW-046 AUT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | 94% | View |
| MT53E512M16D1FW-046 AIT:D TR | Micron Technology Inc. | IC DRAM 8GBIT PAR 200TFBGA | 94% | View |
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