128M - NEW OPTION 4M X 32 3.3V C
AS4C4M32S-6BCN is a Memory manufactured by Alliance Memory, Inc.. 128M - NEW OPTION 4M X 32 3.3V C. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 3V ~ 3.6V, package / case 90-TFBGA.
In Stock: 4,676
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | - |
| Memory Interface | LVTTL |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 5.4 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 90-TFBGA |
| Supplier Device Package | 90-TFBGA (8x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS42S32400F-6TL-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | 100% | View |
| IS42S16320D-6TL | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | 100% | View |
| IS45S32400F-6BLA1 | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PARALLEL 90TFBGA | 100% | View |
| MT48LC8M16A2B4-6A IT:L | Micron Technology Inc. | IC DRAM 128MBIT PARALLEL 54VFBGA | 100% | View |
| MT48LC16M16A2B4-6A:G | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 54VFBGA | 100% | View |
| IS42S32400F-7TL-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | 92% | View |
Submit your RFQ for AS4C4M32S-6BCN and get a quote within 24 hours.
3J LIMITED
