IC DRAM 1GBIT PARALLEL 90FBGA
AS4C32M32MD1-5BINTR is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 1GBIT PARALLEL 90FBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TJ), voltage - supply 1.7V ~ 1.9V, package / case 90-VFBGA.
In Stock: 4,637
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | 1Gb (32M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | -40°C ~ 85°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 90-VFBGA |
| Supplier Device Package | 90-FBGA (8x13) |
AS4C32M32MD1-5BINTR is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT46H64M16LFBF-5 IT:B | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 60VFBGA | 100% | View |
| MT46H4M32LFB5-5 IT:K TR | Micron Technology Inc. | IC DRAM 128MBIT PARALLEL 90VFBGA | 100% | View |
| W989D6DBGX6I TR | Winbond Electronics | IC DRAM 512MBIT PARALLEL 54VFBGA | 92% | View |
| IS42S16800F-5TLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | 92% | View |
| AS4C16M16SA-6TANTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | 83% | View |
| 70V3389S5BFI8 | Renesas Electronics America Inc | IC SRAM 1.125MBIT PAR 208CABGA | 81% | View |
Submit your RFQ for AS4C32M32MD1-5BINTR and get a quote within 24 hours.
3J LIMITED
