IC DRAM 1GBIT PARALLEL 90FBGA
AS4C32M32MD1-5BCN is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 1GBIT PARALLEL 90FBGA. Key specifications: mounting type Surface Mount, operating temperature -25°C ~ 85°C (TJ), voltage - supply 1.7V ~ 1.9V, package / case 90-VFBGA.
In Stock: 2,275
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | 1Gb (32M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | -25°C ~ 85°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 90-VFBGA |
| Supplier Device Package | 90-FBGA (8x13) |
AS4C32M32MD1-5BCN is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS43LR16640A-6BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 60TWBGA | 92% | View |
| MT46H16M32LFB5-6 AIT:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 90VFBGA | 92% | View |
| AS4C8M16SA-6TINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | 83% | View |
| AS4C4M16SB-6TIN | Alliance Memory, Inc. | SDR, 64MB, 4M X 16, 3.3V, 54PIN | 83% | View |
| 71V2556S100PFGI | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 100TQFP | 57% | View |
| 71V3556SA100BGI | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 119PBGA | 57% | View |
Submit your RFQ for AS4C32M32MD1-5BCN and get a quote within 24 hours.
3J LIMITED
