IC DRAM 512MBIT PAR 54TSOP II
AS4C32M16SB-7BCN is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 512MBIT PAR 54TSOP II. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 3V ~ 3.6V, package / case 54-TSOP (0.400", 10.16mm Width).
In Stock: 6,377
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 512Mb (32M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 143 MHz |
| Write Cycle Time - Word, Page | 14ns |
| Access Time | 6 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 54-TSOP II |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| 70V9099L6PF | Renesas Electronics America Inc | IC SRAM 1MBIT PARALLEL 100TQFP | 100% | View |
| 70V3579S6BF8 | Renesas Electronics America Inc | IC SRAM 1.125MBIT PAR 208CABGA | 98% | View |
| IS42S32800J-75ETL-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | 96% | View |
| IS42RM16200D-6BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 32MBIT PARALLEL 54TFBGA | 89% | View |
| IS42VM32200M-75BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | 88% | View |
| 71V632S6PFG | Renesas Electronics America Inc | IC SRAM 2MBIT PARALLEL 100TQFP | 72% | View |
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