IC DRAM 512MBIT PAR 54TSOP II
AS4C32M16SB-6TIN is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 512MBIT PAR 54TSOP II. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 3V ~ 3.6V, package / case 54-TSOP (0.400", 10.16mm Width).
In Stock: 1,159
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 512Mb (32M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 12ns |
| Access Time | 5 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 54-TSOP II |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| AS4C16M16SB-6TIN | Alliance Memory, Inc. | SDRAM - 256K, 16X16, TSOP 54 | 100% | View |
| W9825G2JB-6I TR | Winbond Electronics | IC DRAM 256MBIT PARALLEL 90TFBGA | 100% | View |
| W9864G2JH-6I | Winbond Electronics | 64MB, SDR SDRAM, X32, 166MHZ, 65 | 100% | View |
| W9816G6JH-7I TR | Winbond Electronics | 16MB, SDR SDRAM, 133MHZ, IND TEM | 92% | View |
| AS4C8M32SA-6BINTR | Alliance Memory, Inc. | IC DRAM 256MBIT PARALLEL 90TFBGA | 82% | View |
| 71V3558S100PFGI8 | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 100TQFP | 74% | View |
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