IC DRAM 512MBIT PARALLEL 60FBGA
AS4C32M16MD1B-5BINTR is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 512MBIT PARALLEL 60FBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.95V, package / case 60-VFBGA.
In Stock: 4,300
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR |
| Memory Size | 512Mbit |
| Memory Organization | 32M x 16 |
| Memory Interface | LVCMOS |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 60-VFBGA |
| Supplier Device Package | 60-FBGA (8x9) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| AS4C32M32MD1A-5BINTR | Alliance Memory, Inc. | IC DRAM 1GBIT PARALLEL 90FBGA | 100% | View |
| AS4C16M32MD1-5BIN | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 90FBGA | 100% | View |
| W989D6DBGX6I | Winbond Electronics | IC DRAM 512MBIT PARALLEL 54VFBGA | 92% | View |
| 70V3569S5BCI | Renesas Electronics America Inc | IC SRAM 576KBIT PAR 256CABGA | 81% | View |
| CY7C0430BV-100BGIT | Rochester Electronics, LLC | FOUR-PORT SRAM, 64KX18 | 57% | View |
| 71V2556SA100BGGI8 | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 119PBGA | 57% | View |
Submit your RFQ for AS4C32M16MD1B-5BINTR and get a quote within 24 hours.
3J LIMITED
