IC DRAM 512MBIT PARALLEL 84TFBGA
AS4C32M16D2-25BCN is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 512MBIT PARALLEL 84TFBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.9V, package / case 84-TFBGA.
In Stock: 6,434
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 512Mb (32M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 400 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 400 ps |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 84-TFBGA |
| Supplier Device Package | 84-TFBGA (8x12.5) |
AS4C32M16D2-25BCN is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS43DR16160B-25DBL-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PARALLEL 84TWBGA | 100% | View |
| MT47H128M16RT-25E AIT:C TR | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 84FBGA | 100% | View |
| IS43DR16128B-25EBLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 84TWBGA | 100% | View |
| MT47H32M16HR-25E AIT:G TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | 100% | View |
| MT47H64M16NF-25E AUT:M TR | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 84FBGA | 100% | View |
| IS46DR16640D-25DBLA1-TR | ISSI, Integrated Silicon Solution Inc | AUTOMOTIVE (TC: -40 TO +95C),1G, | 100% | View |
Submit your RFQ for AS4C32M16D2-25BCN and get a quote within 24 hours.
3J LIMITED
