LPDDRX, 16GB, 1G X 16, 0.6V, 200
AS4C1G16MD4V-046BIN is a Memory manufactured by Alliance Memory, Inc.. LPDDRX, 16GB, 1G X 16, 0.6V, 200. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 95°C, voltage - supply 1.06V ~ 1.17V, 1.7V ~ 1.95V, package / case 200-VFBGA.
In Stock: 64
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4X |
| Memory Size | 16Gbit |
| Memory Organization | 1G x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 2.133 GHz |
| Write Cycle Time - Word, Page | 18ns |
| Access Time | 3.5 ns |
| Voltage - Supply | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 95°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 200-VFBGA |
| Supplier Device Package | 200-FBGA (10x15) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W66CP2NQUAFJ | Winbond Electronics | 4GB LPDDR4, DDP, X32, 1600MHZ, - | 100% | View |
| MT53E512M64D2HJ-046 AIT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | 100% | View |
| MT53E1G32D2FW-046 AIT:C TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | 100% | View |
| MT53E512M64D2HJ-046 AAT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | 100% | View |
| MT53E512M64D2HJ-046 AAT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | 100% | View |
| MT53E1G32D2FW-046 AAT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | 100% | View |
Submit your RFQ for AS4C1G16MD4V-046BIN and get a quote within 24 hours.
3J LIMITED
