IC DRAM 512MBIT PARALLEL 90FBGA
AS4C16M32MSA-6BINTR is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 512MBIT PARALLEL 90FBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.95V, package / case 90-VFBGA.
In Stock: 2,396
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile SDRAM |
| Memory Size | 512Mb (16M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5.4 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 90-VFBGA |
| Supplier Device Package | 90-FBGA (8x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| AS4C16M32MSA-6BIN | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 90FBGA | 100% | View |
| IS42S16320F-6TLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | 92% | View |
| IS45S16800F-6BLA1 | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PARALLEL 54TFBGA | 92% | View |
| IS42S16800F-6TLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | 92% | View |
| IS45S16160J-6TLA1 | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | 92% | View |
| IS45S16800F-7CTLA1 | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | 85% | View |
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