IC DRAM 512MBIT PARALLEL 90FBGA
AS4C16M32MS-7BCNTR is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 512MBIT PARALLEL 90FBGA. Key specifications: mounting type Surface Mount, operating temperature -25°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.95V, package / case 90-VFBGA.
In Stock: 3,229
| Attribute | Value |
|---|---|
| Product Status | Discontinued at Digi-Key |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile SDRAM |
| Memory Size | 512Mb (16M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 133 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5.4 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 90-VFBGA |
| Supplier Device Package | 90-FBGA (8x13) |
AS4C16M32MS-7BCNTR is Discontinued at Digi-Key. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT48H4M32LFB5-75 IT:K | Micron Technology Inc. | IC DRAM 128MBIT PARALLEL 90VFBGA | 100% | View |
| IS42VS16160J-75TLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | 100% | View |
| IS42SM32160C-75BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90WBGA | 94% | View |
| MT48LC8M16A2TG-7E IT:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | 93% | View |
| W988D2FBJX6E TR | Winbond Electronics | IC DRAM 256MBIT PARALLEL 90VFBGA | 91% | View |
| IS45S32800D-7TLA1 | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | 88% | View |
Submit your RFQ for AS4C16M32MS-7BCNTR and get a quote within 24 hours.
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