IC DRAM 512MBIT PARALLEL 90FBGA
AS4C16M32MS-6BIN is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 512MBIT PARALLEL 90FBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.95V, package / case 90-VFBGA.
In Stock: 1,299
| Attribute | Value |
|---|---|
| Product Status | Discontinued at Digi-Key |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile SDRAM |
| Memory Size | 512Mb (16M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5.4 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 90-VFBGA |
| Supplier Device Package | 90-FBGA (8x13) |
AS4C16M32MS-6BIN is Discontinued at Digi-Key. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS42S16160J-6TLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | 92% | View |
| IS42S32160F-6TLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 86TSOP II | 92% | View |
| IS42S16400J-6BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 54TFBGA | 92% | View |
| MT48LC16M16A2P-6A IT:G TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | 91% | View |
| AS4C32M16SB-7TINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | 87% | View |
| IS45S32200L-7BLA2-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | 85% | View |
Submit your RFQ for AS4C16M32MS-6BIN and get a quote within 24 hours.
3J LIMITED
