IC DRAM 512MBIT PARALLEL 90FBGA
AS4C16M32MD1B-5BIN is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 512MBIT PARALLEL 90FBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.95V, package / case 90-VFBGA.
In Stock: 9,367
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR |
| Memory Size | 512Mbit |
| Memory Organization | 16M x 32 |
| Memory Interface | LVCMOS |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 90-VFBGA |
| Supplier Device Package | 90-FBGA (8x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT46H64M32LFMA-5 IT:B | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 168WFBGA | 100% | View |
| AS4C16M16SA-6TAN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | 83% | View |
| AS4C32M16SB-6TINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | 83% | View |
| IS45S32200L-7BLA2 | ISSI, Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | 74% | View |
| CY7C0430CV-133BGI | Rochester Electronics, LLC | FOUR-PORT SRAM, 64KX18 | 72% | View |
| 71T75802S100BGGI | Renesas Electronics America Inc | IC SRAM 18MBIT PARALLEL 119PBGA | 60% | View |
Submit your RFQ for AS4C16M32MD1B-5BIN and get a quote within 24 hours.
3J LIMITED
