IC DRAM 256MBIT PAR 54TSOP II
AS4C16M16SA-6TINTR is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 256MBIT PAR 54TSOP II. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 3V ~ 3.6V, package / case 54-TSOP (0.400", 10.16mm Width).
In Stock: 2,855
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 256Mb (16M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 12ns |
| Access Time | 5 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 54-TSOP II |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| 70V3579S5BFI | Renesas Electronics America Inc | IC SRAM 1.125MBIT PAR 208CABGA | 98% | View |
| CYD02S36V-133BBI | Rochester Electronics, LLC | DUAL-PORT SRAM, 64KX36 | 88% | View |
| MT46H32M16LFBF-5 IT:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60VFBGA | 83% | View |
| 71V65603S100PFGI | Renesas Electronics America Inc | IC SRAM 9MBIT PARALLEL 100TQFP | 74% | View |
| 71V2556SA100BGI | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 119PBGA | 74% | View |
| 71T75602S100BGGI | Renesas Electronics America Inc | IC SRAM 18MBIT PARALLEL 119PBGA | 71% | View |
Submit your RFQ for AS4C16M16SA-6TINTR and get a quote within 24 hours.
3J LIMITED
