IC DRAM 256MBIT PARALLEL 54TFBGA
AS4C16M16SA-6BINTR is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 256MBIT PARALLEL 54TFBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 3V ~ 3.6V, package / case 54-TFBGA.
In Stock: 1,541
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 256Mb (16M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 12ns |
| Access Time | 5 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TFBGA |
| Supplier Device Package | 54-TFBGA (8x8) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IM1216SDBABG-6I | Intelligent Memory Ltd. | SDRAM, 128MB, 3.3V, 8MX16, 166MH | 100% | View |
| NDS36PBA-16AT | Insignis Technology Corporation | IC DRAM 256MBIT LVTTL 54FBGA | 100% | View |
| 70V3579S5BCI8 | Renesas Electronics America Inc | IC SRAM 1.125MBIT PAR 256CABGA | 98% | View |
| MT48H16M32LFB5-6 IT:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 90VFBGA | 91% | View |
| IS43LR32640A-6BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 90WBGA | 91% | View |
| MT46H16M32LFBQ-5 AAT:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 90VFBGA | 83% | View |
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3J LIMITED
