IC DRAM 1GBIT PARALLEL 66TSOP II
AS4C128M8D1-6TINTR is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 1GBIT PARALLEL 66TSOP II. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.3V ~ 2.7V, package / case 66-TSSOP (0.400", 10.16mm Width).
In Stock: 7,121
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR |
| Memory Size | 1Gb (128M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 700 ps |
| Voltage - Supply | 2.3V ~ 2.7V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 66-TSSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 66-TSOP II |
AS4C128M8D1-6TINTR is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS43R83200F-6TLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | 100% | View |
| IS43R16320D-6BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 60TFBGA | 100% | View |
| IS43R16160D-6TLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | 100% | View |
| MT46V16M16P-6T IT:F TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 66TSOP | 100% | View |
| IS46R16160F-5TLA1-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | 92% | View |
| NDD36PT6-2AAT | Insignis Technology Corporation | IC DRAM 256MBIT SSTL 66TSOPII | 92% | View |
Submit your RFQ for AS4C128M8D1-6TINTR and get a quote within 24 hours.
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