2G - A DIE 128M X 16 1.8V AUTOMO
AS4C128M16D2A-25BAN is a Memory manufactured by Alliance Memory, Inc.. 2G - A DIE 128M X 16 1.8V AUTOMO. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 105°C (TC), voltage - supply 1.7V ~ 1.9V, package / case 84-TFBGA.
In Stock: 8,028
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | - |
| Memory Interface | SSTL_18 |
| Clock Frequency | 400 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 400 ps |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 84-TFBGA |
| Supplier Device Package | 84-TFBGA (8x12.5) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS46DR16640C-25DBLA2 | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 84TWBGA | 100% | View |
| IS46DR16160B-25DBLA2 | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PARALLEL 84TWBGA | 100% | View |
| IS46DR81280B-25DBLA2-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 60TWBGA | 100% | View |
| MT47H64M16NF-25E AAT:M | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 84FBGA | 100% | View |
| MT47H32M16NF-25E AAT:H TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | 100% | View |
| MT47H64M16NF-25E AAT:M TR | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 84FBGA | 100% | View |
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