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MT53E768M32D4DE-046 IT:E - Micron Technology Inc. - Memory

MT53E768M32D4DE-046 IT:E

Micron Technology Inc.

IC DRAM 24GBIT 200TFBGA

MT53E768M32D4DE-046 IT:E is a Memory manufactured by Micron Technology Inc.. IC DRAM 24GBIT 200TFBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 95°C (TC), voltage - supply 1.06V ~ 1.17V, package / case 200-TFBGA.

In Stock: 5,796

Product Attributes

AttributeValue
DigiKey Programmable-
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - Mobile LPDDR4X
Memory Size24Gbit
Memory Organization768M x 32
Memory InterfaceParallel
Clock Frequency2.133 GHz
Write Cycle Time - Word, Page18ns
Access Time3.5 ns
Voltage - Supply1.06V ~ 1.17V
Operating Temperature-40°C ~ 95°C (TC)
GradeAutomotive
QualificationAEC-Q100
Mounting TypeSurface Mount
Package / Case200-TFBGA
Supplier Device Package200-TFBGA (10x14.5)

Frequently Asked Questions

MT53E768M32D4DE-046 IT:E is a Memory manufactured by Micron Technology Inc.. IC DRAM 24GBIT 200TFBGA

The mounting type of MT53E768M32D4DE-046 IT:E is Surface Mount.

The operating temperature range of MT53E768M32D4DE-046 IT:E is -40°C ~ 95°C (TC).

The supply voltage of MT53E768M32D4DE-046 IT:E is 1.06V ~ 1.17V.

The memory specification of MT53E768M32D4DE-046 IT:E is 24Gbit.

Alternative Products

Part NumberManufacturerDescriptionMatch
MT53E256M32D2FW-046 AIT:B TR Micron Technology Inc. IC DRAM 8GBIT PAR 200TFBGA 100% View
MT53E256M32D2FW-046 IT:B Micron Technology Inc. IC DRAM 8GBIT PAR 200TFBGA 100% View
MT53E256M32D2FW-046 AAT:B TR Micron Technology Inc. IC DRAM 8GBIT PAR 200TFBGA 100% View
MT53E768M32D4DE-046 IT:E TR Micron Technology Inc. IC DRAM 24GBIT 200TFBGA 100% View
IS46LQ32256B-053BLA1-TR ISSI, Integrated Silicon Solution Inc AUTOMOTIVE (TC: -40 TO +95C), 8G 94% View
IS46LQ32256BL-053BLA1-TR ISSI, Integrated Silicon Solution Inc AUTOMOTIVE (TC: -40 TO +95C), 8G 94% View

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