IC DRAM 32GBIT PAR 556WFBGA
MT53E512M64D2HJ-046 AUT:B TR is a Memory manufactured by Micron Technology Inc.. IC DRAM 32GBIT PAR 556WFBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 125°C (TC), voltage - supply 1.06V ~ 1.17V, package / case 556-TFBGA.
In Stock: 5,882
| Attribute | Value |
|---|---|
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4X |
| Memory Size | 32Gbit |
| Memory Organization | 512M x 64 |
| Memory Interface | Parallel |
| Clock Frequency | 2.133 GHz |
| Write Cycle Time - Word, Page | 18ns |
| Access Time | 3.5 ns |
| Voltage - Supply | 1.06V ~ 1.17V |
| Operating Temperature | -40°C ~ 125°C (TC) |
| Grade | Automotive |
| Qualification | AEC-Q100 |
| Mounting Type | Surface Mount |
| Package / Case | 556-TFBGA |
| Supplier Device Package | 556-WFBGA (12.4x12.4) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT53E1G32D2FW-046 AUT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | 100% | View |
| MT53E512M32D1ZW-046BAUT:B TR | Micron Technology Inc. | IC DRAM 16GBIT 2.133GHZ 200WFBGA | 100% | View |
| MT53E1G32D2FW-046 AUT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | 100% | View |
| MT53E128M32D2FW-046 AUT:A | Micron Technology Inc. | IC DRAM 4GBIT PAR 200TFBGA | 100% | View |
| MT53E128M32D2FW-046 AUT:A TR | Micron Technology Inc. | IC DRAM 4GBIT PAR 200TFBGA | 100% | View |
| MT53E512M32D2FW-046 AUT:D TR | Micron Technology Inc. | IC DRAM 16GBIT PAR 200TFBGA | 100% | View |
Submit your RFQ for MT53E512M64D2HJ-046 AUT:B TR and get a quote within 24 hours.
3J LIMITED
