IC DRAM 128GBIT PAR 556LFBGA
MT53E2G64D8TN-046 AAT:A TR is a Memory manufactured by Micron Technology Inc.. IC DRAM 128GBIT PAR 556LFBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 105°C (TC), voltage - supply 1.06V ~ 1.17V, package / case 556-LFBGA.
In Stock: 8,976
| Attribute | Value |
|---|---|
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4X |
| Memory Size | 128Gbit |
| Memory Organization | 2G x 64 |
| Memory Interface | Parallel |
| Clock Frequency | 2.133 GHz |
| Write Cycle Time - Word, Page | 18ns |
| Access Time | 3.5 ns |
| Voltage - Supply | 1.06V ~ 1.17V |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Grade | Automotive |
| Qualification | AEC-Q100 |
| Mounting Type | Surface Mount |
| Package / Case | 556-LFBGA |
| Supplier Device Package | 556-LFBGA (12.4x12.4) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W66BQ6NBUAHJ | Winbond Electronics | 2GB LPDDR4X, X16, 2133MHZ, -40C~ | 100% | View |
| IS46LQ16512B-046BLA2 | ISSI, Integrated Silicon Solution Inc | 8G, 1.06-1.17/1.70-1.95V, LPDDR4 | 100% | View |
| MT53E1G16D1ZW-046 AUT:C TR | Micron Technology Inc. | IC DRAM 16GBIT PAR 200TFBGA | 100% | View |
| MT53E1G16D1ZW-046 AUT:C | Micron Technology Inc. | IC DRAM 16GBIT PAR 200TFBGA | 100% | View |
| MT53E512M32D1ZW-046BAUT:B TR | Micron Technology Inc. | IC DRAM 16GBIT 2.133GHZ 200WFBGA | 100% | View |
| MT53E512M32D1ZW-046BAUT:B | Micron Technology Inc. | IC DRAM 16GBIT 2.133GHZ 200WFBGA | 100% | View |
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