IC DRAM 4GBIT PAR 200TFBGA
MT53E256M16D1FW-046 WT:B is a Memory manufactured by Micron Technology Inc.. IC DRAM 4GBIT PAR 200TFBGA. Key specifications: mounting type Surface Mount, operating temperature -30°C ~ 85°C (TC), voltage - supply 1.06V ~ 1.17V, package / case 200-TFBGA.
In Stock: 1,804
| Attribute | Value |
|---|---|
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4X |
| Memory Size | 4Gbit |
| Memory Organization | 256M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 2.133 GHz |
| Write Cycle Time - Word, Page | 18ns |
| Access Time | 3.5 ns |
| Voltage - Supply | 1.06V ~ 1.17V |
| Operating Temperature | -30°C ~ 85°C (TC) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 200-TFBGA |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT53E256M16D1FW-046 WT:B TR | Micron Technology Inc. | IC DRAM 4GBIT PAR 200TFBGA | 100% | View |
| MT53E128M32D2FW-046 IT:A | Micron Technology Inc. | IC DRAM 4GBIT PAR 200TFBGA | 100% | View |
| NLQ26PFS-6NAT TR | Insignis Technology Corporation | IC DRAM 2GBIT LVSTL 200FBGA | 88% | View |
| IS46LQ16128A-062TBLA1-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT LVSTL 200TFBGA | 88% | View |
| IS46LQ16256B-062BLA1-TR | ISSI, Integrated Silicon Solution Inc | AUTOMOTIVE (TC: -40 TO +95C), 4G | 88% | View |
| IS46LQ16256BL-062BLA1-TR | ISSI, Integrated Silicon Solution Inc | AUTOMOTIVE (TC: -40 TO +95C), 4G | 88% | View |
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