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BY25Q256ESWIG(R) - BYTe Semiconductor - Memory

BY25Q256ESWIG(R)

BYTe Semiconductor

256 MBIT, 3.0V (2.7V TO 3.6V), -

BY25Q256ESWIG(R) is a Memory manufactured by BYTe Semiconductor. 256 MBIT, 3.0V (2.7V TO 3.6V), -. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.7V ~ 3.6V, package / case 8-WDFN Exposed Pad.

In Stock: 6,175

Product Attributes

AttributeValue
DigiKey Programmable-
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NOR
Memory Size256Mbit
Memory Organization32M x 8
Memory InterfaceSPI - Quad I/O, QPI, DTR
Clock Frequency100 MHz
Write Cycle Time - Word, Page50µs, 2.4ms
Access Time7 ns
Voltage - Supply2.7V ~ 3.6V
Operating Temperature-40°C ~ 85°C (TA)
Grade-
Qualification-
Mounting TypeSurface Mount
Package / Case8-WDFN Exposed Pad
Supplier Device Package8-WSON (5x6)

Frequently Asked Questions

BY25Q256ESWIG(R) is a Memory manufactured by BYTe Semiconductor. 256 MBIT, 3.0V (2.7V TO 3.6V), -

The mounting type of BY25Q256ESWIG(R) is Surface Mount.

The operating temperature range of BY25Q256ESWIG(R) is -40°C ~ 85°C (TA).

The supply voltage of BY25Q256ESWIG(R) is 2.7V ~ 3.6V.

The memory specification of BY25Q256ESWIG(R) is 256Mbit.

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