256 MBIT, 3.0V (2.7V TO 3.6V), -
BY25Q256ESEIG(R) is a Memory manufactured by BYTe Semiconductor. 256 MBIT, 3.0V (2.7V TO 3.6V), -. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.7V ~ 3.6V, package / case 8-WDFN Exposed Pad.
In Stock: 8,139
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 256Mbit |
| Memory Organization | 32M x 8 |
| Memory Interface | SPI - Quad I/O, QPI, DTR |
| Clock Frequency | 100 MHz |
| Write Cycle Time - Word, Page | 50µs, 2.4ms |
| Access Time | 7 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-WDFN Exposed Pad |
| Supplier Device Package | 8-WSON (8x6) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| BY25Q256ESSIG(R) | BYTe Semiconductor | 256 MBIT, 3.0V (2.7V TO 3.6V), - | 100% | View |
| W25Q128BVESG | Winbond Electronics | IC FLASH | 98% | View |
| W25Q256FVEAQ | Winbond Electronics | IC FLASH | 98% | View |
| W25Q256FVBBQ | Winbond Electronics | IC FLASH | 98% | View |
| W25N512GWPIR | Winbond Electronics | 512MB SERIAL NAND FLASH, 1.8V | 75% | View |
| W25N512GVEIT | Winbond Electronics | 512MB SERIAL NAND FLASH, 3V | 61% | View |
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