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BY25Q16BLTIG(R) - BYTe Semiconductor - Memory

BY25Q16BLTIG(R)

BYTe Semiconductor

16 MBIT, 1.8V (1.65V TO 1.95V),

BY25Q16BLTIG(R) is a Memory manufactured by BYTe Semiconductor. 16 MBIT, 1.8V (1.65V TO 1.95V),. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.65V ~ 2V, package / case 8-SOIC (0.154", 3.90mm Width).

In Stock: 2,133

Product Attributes

AttributeValue
DigiKey Programmable-
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NOR
Memory Size16Mbit
Memory Organization2M x 8
Memory InterfaceSPI - Quad I/O
Clock Frequency108 MHz
Write Cycle Time - Word, Page3ms, 3ms
Access Time8 ns
Voltage - Supply1.65V ~ 2V
Operating Temperature-40°C ~ 85°C (TA)
Grade-
Qualification-
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

Frequently Asked Questions

BY25Q16BLTIG(R) is a Memory manufactured by BYTe Semiconductor. 16 MBIT, 1.8V (1.65V TO 1.95V),

The mounting type of BY25Q16BLTIG(R) is Surface Mount.

The operating temperature range of BY25Q16BLTIG(R) is -40°C ~ 85°C (TA).

The supply voltage of BY25Q16BLTIG(R) is 1.65V ~ 2V.

The memory specification of BY25Q16BLTIG(R) is 16Mbit.

Alternative Products

Part NumberManufacturerDescriptionMatch
BY25Q16BLTIG(T) BYTe Semiconductor IC FLASH 16MBIT SPI/QUAD 8SOP 100% View
BY25Q16BLSIG(T) BYTe Semiconductor IC FLASH 16MBIT SPI/QUAD 8SOP 100% View
IS25WP020E-JNLE ISSI, Integrated Silicon Solution Inc IC FLASH 2MB SPI 65NM 8SOP 88% View
IS25LP020E-JYLE-TR ISSI, Integrated Silicon Solution Inc IC FLASH 2MBIT QSPI 65NM 8USON 84% View
W25N02JWZEIC Winbond Electronics 2G-BIT SERIAL NAND FLASH, 1.8V 65% View
M25P10-AVMN6TP Alliance Memory, Inc. 1MB 8PIN SOIC NARROW SOP2-8 150 59% View

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