129 MBIT, 3.0V (2.7V TO 3.6V), -
BY25Q128ESEIG(R) is a Memory manufactured by BYTe Semiconductor. 129 MBIT, 3.0V (2.7V TO 3.6V), -. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.7V ~ 3.6V, package / case 8-WDFN Exposed Pad.
In Stock: 2,189
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 128Mbit |
| Memory Organization | 16M x 8 |
| Memory Interface | SPI - Quad I/O |
| Clock Frequency | 120 MHz |
| Write Cycle Time - Word, Page | 60µs, 2.4ms |
| Access Time | 7.5 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-WDFN Exposed Pad |
| Supplier Device Package | 8-WSON (8x6) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| BY25Q128ESFIG(T) | BYTe Semiconductor | 131 MBIT, 3.0V (2.7V TO 3.6V), - | 100% | View |
| BY25Q128ESFIG(R) | BYTe Semiconductor | 130 MBIT, 3.0V (2.7V TO 3.6V), - | 100% | View |
| W25Q02JVTBIM TR | Winbond Electronics | SPIFLASH, 2G-BIT, 4KB UNIFORM SE | 76% | View |
| IS25LP040E-JYLE-TR | ISSI, Integrated Silicon Solution Inc | 4MB QSPI, 8-PIN USON 2X3MM, ROHS | 73% | View |
| IS25LP010E-JNLE-TR | ISSI, Integrated Silicon Solution Inc | 1MB QSPI, 8-PIN SOP 150MIL, ROHS | 73% | View |
| W25N02JWTBIF | Winbond Electronics | 2G-BIT SERIAL NAND FLASH, 1.8V | 62% | View |
Submit your RFQ for BY25Q128ESEIG(R) and get a quote within 24 hours.
3J LIMITED
