512 MBIT, 3.0V (2.7V TO 3.6V), -
BY25FQM512ESFIG(T) is a Memory manufactured by BYTe Semiconductor. 512 MBIT, 3.0V (2.7V TO 3.6V), -. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.7V ~ 3.6V, package / case 16-SOIC (0.295", 7.50mm Width).
In Stock: 5,558
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 512Mbit |
| Memory Organization | 64M x 8 |
| Memory Interface | SPI - Quad I/O, QPI, DTR |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 100µs, 2.4ms |
| Access Time | 5 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 16-SOIC (0.295", 7.50mm Width) |
| Supplier Device Package | 16-SOP |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| GD25LB256EY2GR | GigaDevice Semiconductor (HK) Limited | IC FLASH 256MBIT SPI/QUAD | 91% | View |
| BY25FQ16ESTIG(T) | BYTe Semiconductor | 16 MBIT, 3.0V (2.7V TO 3.6V), -4 | 80% | View |
| BY25FQ16ESTIG(R) | BYTe Semiconductor | 16 MBIT, 3.0V (2.7V TO 3.6V), -4 | 80% | View |
| BY25FQ16ESSIG(T) | BYTe Semiconductor | 16 MBIT, 3.0V (2.7V TO 3.6V), -4 | 80% | View |
| BY25FQ16ESMIG(R) | BYTe Semiconductor | 16 MBIT, 3.0V (2.7V TO 3.6V), -4 | 80% | View |
| BY25FQ16ESWIG(R) | BYTe Semiconductor | 16 MBIT, 3.0V (2.7V TO 3.6V), -4 | 80% | View |
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3J LIMITED
