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BY25FQ32ELWIG(R) - BYTe Semiconductor - Memory

BY25FQ32ELWIG(R)

BYTe Semiconductor

32 MBIT, 1.8V (1.65V TO 1.95V),

BY25FQ32ELWIG(R) is a Memory manufactured by BYTe Semiconductor. 32 MBIT, 1.8V (1.65V TO 1.95V),. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.65V ~ 2V, package / case 8-WDFN Exposed Pad.

In Stock: 3,144

Product Attributes

AttributeValue
DigiKey Programmable-
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NOR
Memory Size32Mbit
Memory Organization4M x 8
Memory InterfaceSPI - Quad I/O, QPI
Clock Frequency133 MHz
Write Cycle Time - Word, Page100µs, 1.5ms
Access Time7 ns
Voltage - Supply1.65V ~ 2V
Operating Temperature-40°C ~ 85°C (TA)
Grade-
Qualification-
Mounting TypeSurface Mount
Package / Case8-WDFN Exposed Pad
Supplier Device Package8-WSON (5x6)

Frequently Asked Questions

BY25FQ32ELWIG(R) is a Memory manufactured by BYTe Semiconductor. 32 MBIT, 1.8V (1.65V TO 1.95V),

The mounting type of BY25FQ32ELWIG(R) is Surface Mount.

The operating temperature range of BY25FQ32ELWIG(R) is -40°C ~ 85°C (TA).

The supply voltage of BY25FQ32ELWIG(R) is 1.65V ~ 2V.

The memory specification of BY25FQ32ELWIG(R) is 32Mbit.

Alternative Products

Part NumberManufacturerDescriptionMatch
BY25FQ32ELUJG(R) BYTe Semiconductor 32 MBIT, 1.8V (1.65V TO 1.95V), 100% View
GD25Q40ESIGR GigaDevice Semiconductor (HK) Limited IC FLASH 4MBIT SPI/QUAD 8SOP 90% View
GD25Q64ETIGY GigaDevice Semiconductor (HK) Limited IC FLASH 64MBIT SPI/QUAD 8SOP 90% View
IS25WP016D-JBLA3-TR ISSI, Integrated Silicon Solution Inc IC FLASH 16MBIT SPI/QUAD 8SOIC 90% View
GD25WQ20EEIGR GigaDevice Semiconductor (HK) Limited IC FLASH 2MBIT SPI/QUAD 8USON 88% View
W25N512GWFIT Winbond Electronics 512MB SERIAL NAND FLASH, 1.8V 71% View

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