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BY25FQ256ELEIG(R) - BYTe Semiconductor - Memory

BY25FQ256ELEIG(R)

BYTe Semiconductor

256 MBIT, 1.8V (1.65V TO 1.95V),

BY25FQ256ELEIG(R) is a Memory manufactured by BYTe Semiconductor. 256 MBIT, 1.8V (1.65V TO 1.95V),. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.65V ~ 1.95V, package / case 8-WDFN Exposed Pad.

In Stock: 6,503

Product Attributes

AttributeValue
DigiKey Programmable-
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NOR
Memory Size256Mbit
Memory Organization32M x 8
Memory InterfaceSPI - Quad I/O, QPI, DTR
Clock Frequency166 MHz
Write Cycle Time - Word, Page400µs, 2.4ms
Access Time5 ns
Voltage - Supply1.65V ~ 1.95V
Operating Temperature-40°C ~ 85°C (TA)
Grade-
Qualification-
Mounting TypeSurface Mount
Package / Case8-WDFN Exposed Pad
Supplier Device Package8-WSON (8x6)

Frequently Asked Questions

BY25FQ256ELEIG(R) is a Memory manufactured by BYTe Semiconductor. 256 MBIT, 1.8V (1.65V TO 1.95V),

The mounting type of BY25FQ256ELEIG(R) is Surface Mount.

The operating temperature range of BY25FQ256ELEIG(R) is -40°C ~ 85°C (TA).

The supply voltage of BY25FQ256ELEIG(R) is 1.65V ~ 1.95V.

The memory specification of BY25FQ256ELEIG(R) is 256Mbit.

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BY25FQ256ELSIG(R) BYTe Semiconductor 256 MBIT, 1.8V (1.65V TO 1.95V), 100% View
BY25FQ256ELWIG(R) BYTe Semiconductor 256 MBIT, 1.8V (1.65V TO 1.95V), 100% View
MX35UF4G24AD-Z4I Macronix IC FLASH 4GBIT SPI/QUAD 8WSON 100% View
MX35UF4G24AD-Z4I8 Macronix IC FLASH 4GBIT SERIAL NAND 8-WSO 93% View

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