4 MBIT, 3.0V (2.7V TO 3.6V), -40
BY25D40ESUIG(R) is a Memory manufactured by BYTe Semiconductor. 4 MBIT, 3.0V (2.7V TO 3.6V), -40. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.7V ~ 3.6V, package / case 8-UFDFN Exposed Pad.
In Stock: 5,209
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 4Mbit |
| Memory Organization | 512K x 8 |
| Memory Interface | SPI - Dual I/O |
| Clock Frequency | 120 MHz |
| Write Cycle Time - Word, Page | 3.6ms |
| Access Time | 7 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-UFDFN Exposed Pad |
| Supplier Device Package | 8-USON (2x3) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| BY25D40ESSIG(R) | BYTe Semiconductor | 4 MBIT, 3.0V (2.7V TO 3.6V), -40 | 100% | View |
| BY25D40ESOIG(T) | BYTe Semiconductor | 4 MBIT, 3.0V (2.7V TO 3.6V), -40 | 100% | View |
| W25Q01NWSFIM | Winbond Electronics | SPIFLASH, 1G-BIT, 1.8V, 4KB UNIF | 88% | View |
| GD25Q16ETIGR | GigaDevice Semiconductor (HK) Limited | 16MBIT NOR FLASH /3.3V /SOP8 150 | 78% | View |
| GD25Q80ETIGR | GigaDevice Semiconductor (HK) Limited | 8MBIT NOR FLASH /3.3V /SOP8 150M | 78% | View |
| GD25Q80ESIGR | GigaDevice Semiconductor (HK) Limited | 8MBIT NOR FLASH /3.3V /SOP8 208M | 78% | View |
Submit your RFQ for BY25D40ESUIG(R) and get a quote within 24 hours.
3J LIMITED
