4 MBIT, 3.0V (2.7V TO 3.6V), -40
BY25D40ESSIG(T) is a Memory manufactured by BYTe Semiconductor. 4 MBIT, 3.0V (2.7V TO 3.6V), -40. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.7V ~ 3.6V, package / case 8-SOIC (0.209", 5.30mm Width).
In Stock: 5,652
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 4Mbit |
| Memory Organization | 512K x 8 |
| Memory Interface | SPI - Dual I/O |
| Clock Frequency | 120 MHz |
| Write Cycle Time - Word, Page | 3.6ms |
| Access Time | 7 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.209", 5.30mm Width) |
| Supplier Device Package | 8-SOP |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| BY25D20ASTIG(R) | BYTe Semiconductor | IC FLASH 2MBIT SPI/DUAL 8SOP | 91% | View |
| EM128LXQAB313HS2T | Everspin Technologies Inc. | IC MRAM XSPI | 88% | View |
| BY25Q16AWSIG(R) | BYTe Semiconductor | 16 MBIT, WIDE VCC (1.65V TO 3.6V | 85% | View |
| AT25EU0081A-SUN-B | Renesas Electronics Operations Services Limited | IC FLASH 8MBIT SPI/QUAD 8SOIC | 85% | View |
| GD25B64ENIGR | GigaDevice Semiconductor (HK) Limited | IC FLASH 64MBIT SPI/QUAD 8USON | 78% | View |
| W25N01GVZEIR | Winbond Electronics | 1G-BIT SERIAL NAND FLASH, 3V | 76% | View |
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3J LIMITED
